Light emitting device package

ABSTRACT

Provided is a light emitting device package. The light emitting device package comprises a first conductive type package body, an insulating layer comprising an opening on the package body, a plurality of compound semiconductor layers disposed on the package body through the opening of the insulating layer, an electrode electrically connected to the plurality of compound semiconductor layers, a first metal layer electrically connected to the package body and disposed on a part of the insulating layer, and a second metal layer electrically connected to the electrode and disposed on the other part of the insulating layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority under 35 U.S.C. 119 to KoreanPatent Application No. 10-2009-0013153 (filed on February 17, 2009),which is hereby incorporated by reference in its entirety.

BACKGROUND

Embodiments relate to a light emitting device package.

Light emitting diodes (LEDs) may form light emitting sources usingGaAs-based, AlGaAs-based, GaN-based, InGaN-based, and InGaAlP-basedcompound semiconductor materials.

Such LEDs are packaged to be used as light emitting devices that emit avariety of colors. Light emitting diodes are used as light sources indiverse applications, including on/off indicators, text displays, andimage displays, that depict colors.

SUMMARY

Embodiments provide a light emitting device package in which a lightemitting device is grown on a conductive type package body.

Embodiments provide a light emitting device package in which current issupplied to a light emitting device through a package body.

Embodiments provide a light emitting device package in which heatgenerated from a light emitting device is emitted through a packagebody.

Embodiments provide a light emitting device package comprising aplurality of wells disposed on a package body.

An embodiment provides a light emitting device package comprising: afirst conductive type package body; an insulating layer comprising anopening on the package body; a plurality of compound semiconductorlayers disposed on the package body through the opening of theinsulating layer; an electrode electrically connected to the pluralityof compound semiconductor layers; a first metal layer electricallyconnected to the package body and disposed on a part of the insulatinglayer; and a second metal layer electrically connected to the electrodeand disposed on the other part of the insulating layer.

An embodiment provides a light emitting device package comprising: afirst conductive type package body comprising a cavity in an upperportion thereof; an insulating layer on the package body; a plurality ofcompound semiconductor layers comprising a conductive type buffer layercontacting a bottom surface of the cavity of the package body; anelectrode on the plurality of compound semiconductor layers; a firstmetal layer electrically connected to the package body and disposed on apart of the insulating layer; and a second metal layer electricallyconnected to the electrode and disposed on the other part of theinsulating layer.

The details of one or more embodiments are set forth in the accompanyingdrawings and the description below. Other features will be apparent fromthe description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a side sectional view of a light emitting device packageaccording to an embodiment.

FIG. 2 is an enlarged view illustrating a light emitting device regionof FIG. 1.

FIGS. 3 to 10 are views illustrating a process of manufacturing a lightemitting device package of FIG. 1.

FIG. 11 is a flowchart illustrating a process of manufacturing a lightemitting device package of FIG. 1.

FIG. 12 is a flowchart illustrating a process of manufacturing a lightemitting device package according to another embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

In the following description, it will be understood that when a layer(or film) is referred to as being ‘on’ another layer or substrate, itcan be directly on the another layer or substrate, or intervening layersmay also be present. Further, it will be understood that when a layer isreferred to as being ‘under’ another layer, it can be directly under theanother layer, and one or more intervening layers may also be present.Reference will now be made in detail to the embodiments of the presentdisclosure, examples of which are illustrated in the accompanyingdrawings. In the following description, words “above,” “one,” “below,”and “underneath” are based on the accompanying drawings. In addition, athickness of each layer is only exemplarily illustrated.

FIG. 1 is a side sectional view of a light emitting device packageaccording to an embodiment.

Referring to FIG. 1, a light emitting device package 100 includes apackage body 110, an insulating layer 120, a first wall 130, a secondwall 135, a first metal layer 140, a second metal layer 145, and a lightemitting device 150.

The package body 110 may be a conductive body, e.g., a wafer levelpackage (WLP) using a conductive substrate formed of a silicon material.A cavity 103 having a predetermined depth is defined in an upper portionof the package body 110. The cavity 103 may have any one of a base tubetype of groove, a polygonal groove and a circular groove. The grooveshapes may be realized into a single structure or a multi-layered stairstructure but is not limited thereto.

The package body 110 may have a first conductive characteristic. Here,the first conductive characteristic represents a region in which a firstconductive type dopant is injected or diffused.

Also, the package body 110 may have the same polarity as a conductivetype buffer layer 151, but is not limited thereto.

The cavity 103 may have a lateral surface 101 vertically disposed orinclined with respect to a bottom surface of the package body 110. Also,the lateral surface 101 of the cavity 103 may be inclined as apredetermined angle or curvature.

The insulating layer 120 is disposed on a surface of the package body110. The insulating layer 120 may be formed of one selected from variousinsulating materials such as silicon oxide (for example, SiO₂), siliconthermal oxide, aluminum nitride (AlN), silicon carbide (SiC), alumina,and silicon nitride, dielectric materials, but is not limited thereto.Here, the insulating layer 120 may be formed of, for example, siliconthermal oxide that effectively realizes a Zener diode structure.

For example, a thickness from a bottom surface of the cavity 103 to thebottom surface of the package body 110 may range from about 500 um toabout 2,000 um. This thickness represents a range in which heat iseffectively transferred without breaking out of the silicon substrate.However, this embodiment is not limited to the thickness of the siliconsubstrate.

The insulating layer 120 is disposed on the surface of the package body110. The insulating layer 120 may not be disposed on a portion of thesurface of the package body 110. The insulating layer 120 has aplurality of openings P1 to P5. The first opening P1 may be defined inthe bottom surface of the cavity 103, the second opening P2 may bedefined in a portion of the second wall 135, the third opening P3 may bedefined in a portion of the bottom surface of the package body 110, andthe fourth opening P4 may be defined in a portion of the first wall 130,but are not limited thereto.

At least portion of the first opening P1 and the third opening P3 of theinsulating layer 120 may be vertically disposed on both surfaces of thepackage body 110 to overlap each other.

One or more wells for realizing a transistor TFT and Zener diode may bedefined in a predetermined region of the package body 110. The wells mayhave polarities equal or opposite to that of the package body 110.Hereinafter, this embodiment will describe a structure for realizing theZener diode as an example.

The first well 130 may be defined in a predetermined region of thepackage body 110. A material having a polarity opposite to that of thepackage body 110, for example, a second conductive type dopant isinjected or diffused in a first well region of the package body 110 todefine the first well 130. The first well 130 may have a predeterminedsize in a predetermined region of the package body 110, but is notlimited thereto.

The first conductive type dopant is injected or diffused in a portion ofthe first well 130 to define the second well 135. This embodiment is notlimited to a position and number of the second well 135.

The first well 130 connects the package body 110 to the second well 135,and the second well 135 connects the first well 130 to the second metallayer 145.

The first well 130 and the second well 135 may be realized as the Zenerdiode and electrically connected to the light emitting device 150.Although the Zener diode is disposed in a side region of the packagebody 110 in this embodiment, the Zener diode may be disposed in eitherside regions or a lower region. Here, this embodiment is not limited topositions and number of the wells.

The first and second metal layers 140 and 145 are disposed on theinsulating layer 120. The first and second metal layers 140 and 145respectively have predetermined patterns and are electrically isolatedfrom each other. The first metal layer 140 is disposed at one side ofthe package body 110 with respect to the light emitting device 150. Thesecond metal layer 145 is disposed at the other side of the package body110 with respect to the light emitting device 150. One ends of the firstand second layers 140 and 145 extend toward the cavity 103, and theother ends of the first and second layers 140 and 145 extend up to thebottom surface of the package body 110.

The first and second metal layers 140 and 145 may have a single layerstructure or a multi-layered structure using at least one of metalmaterials such as Cu, Ni, Au, and Ti, but are not limited thereto. Thefirst and second metal layers 140 and 145 may serve as at least twoelectrode leads. The number of leads may be varied according to thepattern configuration of the metal layers.

A body contact part 143 and a first well contact part 144 are disposedon the other side 142 of the first metal layer 140. The body contactpart 143 contacts the package body 110 through the third opening P3 ofthe insulating layer 120. The body contact part 143 vertically overlapsthe light emitting device 150 at a lower portion of the package body110. The first contact part 144 contacts the first well 130 through thefourth opening P4 of the insulating layer 120.

The other side 146 of the second metal layer 145 contacts the secondwell 135 through the second opening P2 of the insulating layer 120.

The light emitting device 150 is disposed in the cavity 103 of thepackage body 110. The package body 110 is used as a substrate forgrowing. A semiconductor layer of the light emitting device 150 isdisposed on the package body 110 the first opening P1 defined in thebottom surface of the cavity 103.

In the light emitting device 150, the conductive type buffer layer 151,a first conductive type semiconductor layer 152, an active layer 153,and a second conductive type semiconductor layer 156 are disposed on thepackage body 110.

The first metal layer 140 is electrically connected to the conductivetype buffer layer 151 of the light emitting device 150 through thepackage body 110. The second metal layer 145 is connected to the lightemitting device 150 using a wire 158.

Referring to FIGS. 1 and 2, the light emitting device 150 includes theconductive type buffer layer 151, the first conductive typesemiconductor layer 152, the active layer 153, the second conductivetype semiconductor layer 154, a transparent electrode layer 155, and anelectrode 156.

The conductive type buffer layer 151 is disposed on the package body110. The conductive type buffer layer 151 is disposed on the bottomsurface of the cavity 103. Also, the conductive type buffer layer 151 isdisposed on the package body 110 exposed through the first opening P1 ofthe insulating layer 120.

The conductive type buffer layer 151 may be formed of a Group III-Vcompound semiconductor doped with the first conductive type dopant, forexample, one selected from the group consisting of GaN, InN, AlN, InGaN,AlGaN, InAlGaN, and AlInN. Also, the conductive type buffer layer 151may be formed of conductive oxide of Group II to VI compounds, forexample, ZnO_(x). The conductive type buffer layer 151 may have a singlelayer structure or a multi-layered structure.

The conductive type buffer layer 151 may have a size equal to that ofthe first opening P1.

The first conductive type semiconductor layer 152 is disposed on theconductive type buffer layer 151. The first conductive typesemiconductor layer 152 may be realized as a semiconductor materialhaving the composition equation of In_(x)Al_(y)Ga_(1−x−y)N (where 0≦x≦1,0≦y≦1, and 0≦x+y≦1) . Also, the first conductive type semiconductorlayer 152 is doped with the first conductive type dopant. For example,the first conductive type semiconductor layer 152 may be formed of oneselected from the group consisting of GaN, InN, AlN, InGaN, AlGaN,InAlGaN, and AlInN, which are formed by combination of Group IIIelements and Group VI elements. When the first conductive typesemiconductor layer 152 is an N-type semiconductor layer, the firstconductive type dopant is an N-type dopant. The N-type dopant includesSi, Ge, Sn, and the like.

The first conductive type semiconductor layer 152 may have the same sizeas the conductive type buffer layer 151 and be disposed on theconductive type buffer layer 151.

The active layer 153 is disposed on the first conductive typesemiconductor layer 152. The active layer 153 has a single quantum wellstructure or a multi-quantum well structure. The active layer 153 mayhave a cycle of a well layer and a barrier layer, for example, cycle ofa InGaN well layer/GaN barrier layer or a cycle of an AlGaN welllayer/GaN barrier layer using compound semiconductor materials of GroupIII elements and Group V elements.

The active layer 153 is formed of a material having a band gap energyaccording to a wavelength of emitted light. For example, in case of bluelight emission having a wavelength of about 440 nm to about 460 nm, theactive layer 153 may have the single or multi quantum well structurehaving the cycle of the a InGaN well layer/GaN barrier layer. The activelayer 153 may be formed of a material emitting colored light such aslight having a blue wavelength, light having a red wavelength, and lighthaving a green wavelength. The active layer 153 may emit light having anUV wavelength. A conductive clad layer (not shown) may be disposed onand/or under the active layer 153. The conductive clad layer may berealized as an AlGaN layer.

The second conductive type semiconductor layer 154 is disposed on theactive layer 153. The second conductive type semiconductor layer 153 maybe realized as a semiconductor material having the composition equationof In_(x)Al_(y)Ga_(1−x−y)N (where 0≦x≦1, 0≦y≦1, and 0≦x+y≦1). Also, thesecond conductive type semiconductor layer 154 is doped with the secondconductive type dopant. For example, the second conductive typesemiconductor layer 154 may be formed of one selected from the groupconsisting of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN, which areformed by combination of Group III elements and Group V elements. Whenthe second conductive type semiconductor layer 154 is a P-typesemiconductor layer, the second conductive type dopant is a P-typedopant. The P-type dopant includes Mg, Zn, Ca, Sr, Ba, and the like.

A third conductive type semiconductor layer (not shown) may be disposedon the second conductive type semiconductor layer 154. The thirdconductive type semiconductor layer may have a polarity opposite to thatof the second conductive type semiconductor layer 154.

Other semiconductor layers or structures may be disposed between thefirst conductive type semiconductor layer 152, the active layer 153, andthe second conductive type semiconductor layer 154 or inside each of thefirst conductive type semiconductor layer 152, the active layer 153, andthe second conductive type semiconductor layer 154, but is not limitedthereto. The first conductive type semiconductor layer 152, the activelayer 153, and the second conductive type semiconductor layer 154 mayhave the same size as that of the conductive type buffer layer 151.Here, the size of each of the layers may represent an area of aninterface contacting a top surface or a bottom surface of each of thelayer.

The first conductive type semiconductor layer 152, the active layer 153,and the second conductive type semiconductor layer 154 may be defined asa light emitting structure. The light emitting structure may have a P-Njunction structure, an N-P junction structure, or an N-P-N junctionstructure within a technical scope of this embodiment.

The transparent electrode layer 155 may be disposed on the secondconductive type semiconductor layer 154. The transparent electrode layer155 may be formed of at least one of ITO (indium tin oxide), IZO (indiumzinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zincoxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tinoxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO(gallium zinc oxide), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, andNi/IrOx/Au/ITO. An electrode 156 is disposed on the transparentelectrode layer 155. The electrode 156 may be formed of at least one ortwo or more compounds of Cr, Ag, Ag alloy, Ni, Al, Al alloy, Rh, Pd, Ir,Ru, Mg, Zn, Pt, Au, and Hf. Also, the electrode 156 may have a singlelayer structure or a multi-layered structure. The electrode 156 maydirectly or indirectly contact the transparent electrode layer 155and/or the second conductive type semiconductor layer 154, but is notlimited thereto.

The electrode 156 of the light emitting device 150 may be electricallyconnected to the second metal layer 145 using a wire 158.

A transparent resin material 107 such as silicon or epoxy may bedisposed in the cavity 103. A phosphor may be added to the resinmaterial 107. A lens (e.g., a convex lens) may be attached or molded onthe resin material 107.

The first and second metal layers 140 and 145 of the light emittingdevice package 100 may be mounted on a substrate. For example, thesubstrate may be mounted on a ceramic substrate, a metal core printedcircuit board (MCPCB), or a flexible substrate. The first and secondmetal layers 140 and 145 may be mounted by a solder-bonding using asurface-mount technology (SMT).

The light emitting device 150 receives a power through the first andsecond metal layers 140 and 145. Carriers supplied to the second metallayer 145 are supplied to channels of the wire 158, the second electrode156, the transparent electrode layer 155, and the second conductive typesemiconductor layer 154. Carriers supplied to the first metal layer 140are supplied to channels of the package body 110, the conductive typebuffer layer 151, and the first conductive type semiconductor layer 152.

When the active layer 153 emits light, the emitted light is emitted inall directions. The first and second metal layers 140 and 145 disposedon a lateral surface 101 of the cavity 103 reflect the incident light.At this time, the body contact part 143 of the first metal layer 140contacts a bottom surface of the package body 110 at a predeterminedarea. Thus, the body contact part 143 may be electrically connected tothe package body 110 to effectively emit heat transferred to the packagebody 110.

The first and second wells 130 and 135 are connected to the lightemitting device 150 in parallel in terms of a circuit structure. Thus,the first and second wells 130 and 135 protect the light emitting device150 from an abnormal voltage (e.g., ESD) applicable to the lightemitting device 150.

FIGS. 3 to 10 are views illustrating a process of manufacturing a lightemitting device package of FIG. 1. FIG. 11 is a flowchart illustrating aprocess of manufacturing a light emitting device package of FIG. 1.

Referring to FIGS. 3 and 4, a cavity 103 is formed in an upper portionof a package body 110 (see operation S101 of FIG. 11). The package body110 may have a first conductive characteristic. Alternatively, a firsttype dopant may be injected or diffused to form the package body 110.The cavity 103 may be formed through an etch process, e.g., a wet and/ordry etch process. Also, the cavity 103 may not be formed.

An insulating layer 120 is formed on a surface of the package body 110(see operation S102 of FIG. 11). A first opening P1 of the insulatinglayer 120 may be opened by patterning through a photoresist process. Thefirst opening P1 may be an LED region. A top surface of the package body110 disposed on a bottom surface of the cavity 103 is exposed (seeoperation S103 of FIG. 11). Here, a region except the first opening P1of the insulating layer 120 may be formed by masking using a maskpattern and etching.

Referring to FIGS. 4 to 6, when the first opening P1 of the insulatinglayer 120 is formed, a compound semiconductor layer is formed on thepackage body 110 exposed through the first opening P1 (see operation 104of FIG. 11). A conductive type buffer layer 151, a first conductive typesemiconductor layer 152, an active layer 153, and a second conductivetype semiconductor layer 154 are sequentially grown using Group II to VIcompound semiconductor materials within a growth equipment.

The growth equipment may include an E-beam evaporator, physical vapordeposition (PVD), chemical vapor deposition (CVD), plasma laserdeposition (PLD), a dual-type thermal evaporator, sputtering, or metalorganic chemical vapor deposition (MOCVD), but is not limited thereto.

The conductive type buffer layer 151 may be formed of the Group II to VIcompound semiconductor materials. The conductive type buffer layer 151may be formed of a Group III-V compound semiconductor material, to whicha first conductive type dopant is doped, for example, one of GaN, InN,AlN, InGaN, AlGaN, InAlGaN, and AlInN. The first conductive type dopantincludes a Group IV elements such as Si. When the conductive type bufferlayer 151 is a GaN buffer layer, gas containing an N-type dopant such asNH₃, TMGa, and Si may be supplied to form the conductive type bufferlayer 151. Alternatively, the conductive type buffer layer 151 may beformed of a material that is an oxide-based material and has aconductive characteristic.

The first conductive type semiconductor layer 152, the active layer 153,and the second conductive type semiconductor layer 154 are sequentiallyformed on the conductive type buffer layer 151. A specific growth methodof each of the layers may be easily applied according to the embodimentby those skilled in the art. Also, the first conductive typesemiconductor layer 152 may be an N-type semiconductor layer, and thesecond conductive type semiconductor layer 154 may be a P-typesemiconductor layer. On the other hand, the first conductive typesemiconductor layer 152 may be a P-type semiconductor layer, and thesecond conductive type semiconductor layer 154 may be an N-typesemiconductor layer. Also, a semiconductor layer having a polarityopposite to that of the second conductive type semiconductor layer 154may further formed on the second conductive type semiconductor layer154, but is not limited thereto. An N-type dopant is doped into a GroupIII-V compound semiconductor to form the N-type semiconductor layer. AP-type dopant is doped into the III-V compound semiconductor to form theP-type semiconductor layer.

A transparent electrode layer 155 may be formed on the second conductivetype semiconductor layer 154. The transparent electrode layer 155 may beformed of at least one of ITO (indium tin oxide), IZO (indium zincoxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide),IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO(aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zincoxide), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO. Here, thetransparent electrode layer 155 may be formed when a metal layer isformed, but is not limited thereto.

Referring to FIGS. 7 and 8, a fifth opening P5 of the insulating layer120 is patterned to expose the package body 110. That is, the packagebody 110 is exposed through the fifth opening P5. A first ion isinjected into the exposed package body 110 to form a first well 130 (seeoperations S105 and S106 of FIG. 11). The first ion may include thefirst conductive type dopant.

The fifth opening P5 is covered again by a material forming theinsulating layer 120. Here, a portion of the fifth opening P5 may beused as a second opening P2. The second opening P2 may be formed bypatterning the insulating layer 120 or uses an exposed portion of thefifth opening P5.

A second ion having a polarity opposite to that of the first ion isinjected through the second opening P2 to form a second well 135 (seeoperations S107 and S108 of FIG. 11). The second well 135 may be formedat a portion of the first well 130 and connected to the package body 110through the first well 130.

Referring to FIGS. 9 and 10, a metal region such as a metal layer and anelectrode is patterned to deposit a metal (see operation S109 and S110of FIG. 11). An electrode 156 is deposited on the transparent electrodelayer 155. Here, the transparent electrode layer 155 may be formedbefore the electrode 156 is formed, but is not limited thereto.

Here, the electrode 156 may be formed into a single layer structure or amulti-layered structure using at least one of Cr, Ag, Ag alloy, Ni, Al,Al alloy, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf.

A patterning process is performed on the insulating layer 120 to formthird and fourth openings P3 and P4. In the patterning process, a regionexcept the opening region is masked using a mask pattern to form thethird and fourth opening P3 and P4.

First and second metal layers 140 and 145 are formed on the insulatinglayer 120. The first and second metal layers 140 and 145 may be formedof one selected from the group consisting of Ti, Cu, Ni, and Au using asputtering apparatus or a plating process. The first and second metallayers 140 and 145 are electrically isolated from each other.

The first metal layer 140 extends up to a side of the cavity, a side ofa bottom surface of the package body 110, and a portion of a bottomsurface of the package body 110. The other side 142 of the first metallayer 140 is disposed on the bottom surface of the package body 110. Thefirst metal layer 140 contacts the package body 110 and the first well144. That is, a body contact part 143 of the first metal layer 140contacts the package body 110 through the third opening P3 of theinsulating layer 120. A first well contact part 144 contacts the firstwell 130 through the fourth opening P4 of the insulating layer 120.

The second metal layer 145 extends up to the other side of the cavity,the other side of the package body 110, and a portion of the bottomsurface of the package body 110. The second metal layer 145 is formed onthe second well 135 through the second opening P2 of the insulatinglayer 120. A second well contact part 146 of the second metal layer 145electrically contacts the second well 135.

The other sides 142 and 146 of the first and second metal layers 140 and145 may serve as a metal for a surface-mount technology (SMT). Here, theother side 142 of the first metal layer 140 may have a size 1.5 timesgreater than that of the other side 146 of the second metal layer 145.

The electrode 156 of the light emitting device 150 may be connected tothe second electrode layer 145 through a connection member, i.e., thewire 158.

A resin material 117 is formed in the cavity 103. The resin material 117may include a resin-based material such as silicon or epoxy. A phosphormay be added to the resin material 107. A lens may be formed on theresin material 117.

Thereafter, when a packaging process of the light emitting device 150 iscompleted, a dicing process may be performed for each of the packages.

FIG. 12 is a flowchart illustrating a process of manufacturing a lightemitting device package according to another embodiment. In descriptionof FIG. 12, the components of FIG. 1 will be cited, and their duplicateddescriptions will be omitted.

Referring to FIGS. 12 and 1, a cavity 103 may be formed at an upperportion of a package body 119 in operation S121). The cavity may not beformed, but is not limited thereto.

In operation S122, an insulating layer 120 is formed on a surface of thepackage body 110. Here, the insulating layer 120 may be formed on aportion of the surface or an entire surface of the package body, but isnot limited thereto.

In operation S123, a first well region of the insulating layer 120 ispatterned. In operation S124, the device (LED) region is patterned.Here, the patterning processes of the first well region and the deviceregion may be changed in sequence.

Thereafter, a first diffusion process is performed to diffuse a firstion into the first well region of the package body 110 in operationS125. In operation S127, a second well region of the first well regionis patterned to diffuse a second ion in the second well region of thepackage body 110 through a second diffusion process. Here, the first ionincludes a first conductive type dopant, and the second ion includes asecond conductive type dopant.

In operation S128, an LED epitaxial layer serving as a compoundsemiconductor layer is formed in the device (LED) deformation region. Aconductive type buffer layer 151, a first conductive type semiconductorlayer 152, an active layer 153, and a second conductive typesemiconductor layer 154 are sequentially grown using Group II to VIcompound semiconductor materials within a growth equipment (e.g.,PEMICVD) to form the LED epitaxial layer.

Thereafter, the metal region is patterned to deposit a metal inoperations S129 and S130. A transparent electrode layer 155 is formed onthe compound semiconductor layer, and an electrode 156 is deposited onthe transparent electrode layer 155.

In operations S131 and S132, a SMT metal region defined on the packagebody 110 is patterned to form a SMT metal, e.g., a first metal layer anda second metal layer.

Thereafter, a wire bonding process is performed on the light emittingdevice 150, and then, a resin material is formed in the cavity region.

A method of manufacturing the light emitting device package includes:forming an insulating layer on a surface of a first conductive typepackage body; patterning a first region defined on the package body toform a conductive type buffer layer; forming a light emitting structureincluding a Group III-V compound semiconductor layer on the conductivetype buffer layer; forming a first electrode on the light emittingstructure, pattering a lower portion of the package body to form a firstmetal layer; and forming a second metal layer on the other side of theinsulating layer.

According to the embodiments, since the light emitting device isdirectly grown on the conductive type package body, a currentcharacteristic of the light emitting device may be improved.

In the light emitting device package according to the embodiments, sincethe plurality of compound semiconductor layer is directly grown on thepackage body and packaged, the manufacturing process of the lightemitting device package may be improved. Also, a growth substrate suchas a sapphire substrate may not be used. The embodiments improve aheatsink characteristic and an ESD characteristic of the light emittingdevice.

Another embodiment provides a lighting system which comprises the lightemitting device described above. The lighting system may include lamp,street light, light unit not limited thereto.

The light emitting device package according to the embodiments may beused as light sources in various fields such as light display devices,indicating devices, lighting devices, alphanumeric display devices, andimage display devices.

Any reference in this specification to “one embodiment,” “anembodiment,” “example embodiment,” etc., means that a particularfeature, structure, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention. Theappearances of such phrases in various places in the specification arenot necessarily all referring to the same embodiment. Further, when aparticular feature, structure, or characteristic is described inconnection with any embodiment, it is submitted that it is within thepurview of one skilled in the art to effect such feature, structure, orcharacteristic in connection with other ones of the embodiments.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

1. A light emitting device package comprising: a first conductive typepackage body; an insulating layer comprising an opening on the packagebody; a plurality of compound semiconductor layers disposed on thepackage body through the opening of the insulating layer; an electrodeelectrically connected to the plurality of compound semiconductorlayers; a first metal layer electrically connected to the package bodyand disposed on a part of the insulating layer; and a second metal layerelectrically connected to the electrode and disposed on the other partof the insulating layer.
 2. The light emitting device according to claim1, wherein the package body comprises a silicon material.
 3. The lightemitting device according to claim 1, wherein the plurality of compoundsemiconductor layers comprise a conductive type buffer layer disposed ona top surface of the package body.
 4. The light emitting deviceaccording to claim 3, wherein the insulating layer comprises an openingin a bottom surface of the package body to contact the first metallayer.
 5. The light emitting device according to claim 3, wherein theconductive type buffer layer directly contacts the top surface of thepackage body through the opening of the insulating layer.
 6. The lightemitting device according to claim 1, comprising a protection devicedisposed on the package body, the protection device electricallyconnected to the first metal layer and the second metal layer.
 7. Thelight emitting device according to claim 1, wherein the electrode isdisposed on the plurality of compound semiconductor layers and comprisesa connection member comprising a wire connecting the electrode to thesecond metal layer.
 8. The light emitting device according to claim 4,wherein at least a portion of the first metal layer under the bottomsurface of the package body vertically overlaps the conductive typebuffer layer.
 9. The light emitting device according to claim 6, whereinthe protection device comprises: a first well connected to the firstmetal layer having a polarity opposite to that of the package body; anda second well connected to the second metal layer at a portion of thefirst well, the second well having the same polarity as the packagebody.
 10. The light emitting device according to claim 1, wherein theplurality of compound semiconductor layers comprises: a first conductivetype semiconductor layer on the package body; an active layer on thefirst conductive type semiconductor layer; and a second conductive typesemiconductor layer on the active layer.
 11. The light emitting deviceaccording to claim 3, wherein the conductive type buffer layer comprisesa first conductive type nitride semiconductor material or conductiveoxide.
 12. A light emitting device package comprising: a firstconductive type package body comprising a cavity in an upper portionthereof; an insulating layer on the package body; a plurality ofcompound semiconductor layers comprising a conductive type buffer layercontacting a bottom surface of the cavity of the package body; anelectrode on the plurality of compound semiconductor layers; a firstmetal layer electrically connected to the package body and disposed on apart of the insulating layer; and a second metal layer electricallyconnected to the electrode and disposed on the other part of theinsulating layer.
 13. The light emitting device according to claim 12,wherein the package body comprises a silicon material, and theinsulating layer comprises any one of silicon oxide, silicon thermaloxide, aluminum nitride (AlN), silicon carbide (SiC), alumina, andsilicon nitride.
 14. The light emitting device according to claim 12,wherein the insulating layer comprising: a first opening in a bottomsurface of the cavity to contact the conductive type buffer layer; and asecond opening in a bottom surface of the package body to contact thefirst metal layer.
 15. The light emitting device according to claim 14,wherein at least portions of the first opening and the second opening ofthe insulating layer vertically overlaps both surfaces of the packagebody.
 16. The light emitting device according to claim 14, wherein theplurality of compound semiconductor layers comprises: a first conductivetype semiconductor layer on the conductive type buffer layer; an activelayer on the first conductive type semiconductor layer; and a secondconductive type semiconductor layer between the active layer and theelectrode.
 17. The light emitting device according to claim 15, whereinthe conductive type buffer layer has the same size as the first openingof the insulating layer.
 18. The light emitting device according toclaim 16, comprising a plurality of wells in which ions are diffused orinjected on the package body, wherein the plurality of wells selectivelycontacts the first and second metal layers.
 19. The light emittingdevice according to claim 16, comprising a transparent electrode layeron the second conductive type semiconductor layer.
 20. The lightemitting device according to claim 12, comprising a resin material inthe cavity to cover the plurality of compound semiconductor layer.